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规格型号 |
RY4N12S3 |
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产品参数 |
电压：12V，电流：4A，Vgs：12V，Rds：45Ω |
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产品品牌 |
日月辰 |
产品封装 |
SOT-23 |
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详细说明 |
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RY4N12S3 SOT-23
Description
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on)
with low gate charge. It can be used in a wide variety of applications.
Features
1) VDS=20V,ID=4A,RDS(ON)<45mΩ@VGS=4.5V. RDS(ON)<59mΩ@VGS=2.5V.
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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